利用离子源辅助的电子束热蒸发技术研制了高性能的Sr-F共掺杂SnO2(SFTO)基透明导电薄膜。所制备的SFTO薄膜具有良好的导电性和透过率, 电阻率低于3.9×10-3 Ω·cm, 380～2 500 nm波段的平均透过率大于85%, 功函数约为5.10 eV。SFTO透明导电薄膜为非晶态薄膜, 具有较好的表面平整度(Rq＜1.5 nm)。与工业上F掺杂SnO2薄膜的衬底温度(＞450 ℃)相比, 本文所用的衬底温度仅为300 ℃, 有望直接将SnO2基透明导电非晶薄膜制备到柔性的塑料(PI、PAR或PCO)衬底上以获得性能良好的柔性电极。

Sr-F codoped SnO2 (SFTO) transparent conductive oxide films were prepared by ion-assisted electron beam deposition at a low temperature. The films show electrical resistivity of less than 3.9×10-3 Ω·cm, high average optical transmittance of 85% from 380 nm to 2 500 nm, and high work function of about 5.1 eV. The films are amorphous and have favorable surface morphology with average roughness of about 1.5 nm. The deposition temperature of SFTO film is 300 ℃, which is much lower than that of FTO products. SFTO transparent conductive amorphous thin film can be expected to be directly prepared on flexible plastic (PI, PAR or PCO) substrate, in order to obtain flexible electrodes with good performance.