发光学报, 2015, 36 (8): 888, 网络出版: 2015-08-25   

Ni/SnO2复合薄膜的制备与光电性能

Preparation and Photoelectric Properties of Ni/SnO2 Composite Thin Films
作者单位
长春理工大学 化学与环境工程学院, 吉林 长春130022
摘要
采用旋涂法将溶胶-凝胶法制备的Ni/SnO2凝胶在玻璃基底上镀膜,得到了Ni/SnO2复合薄膜,探讨了镍掺杂量、煅烧温度对薄膜结构和形貌的影响。通过X射线衍射、红外光谱、扫描电子显微镜等测试手段对Ni/SnO2复合膜的结构和形貌进行表征。结果显示,500 ℃ 下煅烧的薄膜样品的结晶度较高,粒径小,颗粒分布均匀。用紫外-可见分光光度计和四探针电阻仪对其进行光学、电学性能测试,结果显示: 适量的Ni掺杂可以提高SnO2薄膜在近紫外光区的吸收,Ni/SnO2薄膜在近紫外光区的吸收随着Ni2+掺杂摩尔分数从5%增加到10%而逐渐减小。当Ni2+掺杂摩尔分数为6%时,Ni/SnO2复合薄膜的导电性能最好。
Abstract
Ni/SnO2 films were prepared by spin coating Ni/SnO2 gel on the glass substrates. The effects of the doping amount of nickel and calcination temperature on the structure and morphology of Ni/SnO2 films were discussed. The structure and morphology of Ni/SnO2 composite film were characterized by using XRD, IR, SEM and other testing methods. The results show that the particles of the film calcined at 500 ℃ have high crystallization, small size, and distribute uniformly. The right amount of Ni2+ doping can improve the absorbance in the near ultraviolet region of SnO2 film, and the absorbance in the near ultraviolet region of Ni/SnO2 film decreases with the increasing of Ni2+ mole fraction from 5% to 10%. The conductivity of Ni/SnO2 film is the best when Ni2+ mole fraction is 6%.

何瑞英, 魏长平, 王国栋, 伞靖, 彭春佳. Ni/SnO2复合薄膜的制备与光电性能[J]. 发光学报, 2015, 36(8): 888. HE Rui-ying, WEI Chang-ping, WANG Guo-dong, SAN Jing, PENG Chun-jia. Preparation and Photoelectric Properties of Ni/SnO2 Composite Thin Films[J]. Chinese Journal of Luminescence, 2015, 36(8): 888.

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