为了实现InGaAs探测器响应波段向可见增强, 在传统的外延材料中加入一层InGaAs腐蚀阻挡层, 制备了32×32元平面型InGaAs面阵探测器, 采用机械抛光和化学湿法腐蚀相结合的方法, 去除了InP衬底.结果表明, 探测器的响应波段为0.5~1.7μm, 室温下在波长为500nm处的量子效率约为16%, 850nm处量子效率约为54%, 1550nm处量子效率约为91%.暗电流大小与衬底减薄之前基本保持一致.理论分析了材料参数对器件量子效率的影响, 为进一步优化可见波段探测器的量子效率提供了依据.

In order to extend the response of InGaAs short-wave infrared detectors to visible wavelength band, a InGaAs etch stop layer was added to the standard InGaAs epitaxial structure. After the fabrication of 32×32 pixel planar InGaAs detectors, the InP substrate was removed with mechanical thinning and chemical wet etching. The results indicated that the response of detectors after substrate removal covered the wavelength band from 400nm to 1700nm. Quantum efficiency is approximately 16% at 500nm, 54% at 850nm, and 91% at 1550nm. The detectors achieved almost the same low dark current as they did before the substrate removal process. The effect of parameters of epitaxial material on the quantum efficiency has been analyzed and simulated, and then the method to optimize the visible response of detectors was given.