光电倍增管, 在单光子探测应用中, 有独特优势, 其有效面积大, 暗电流低, 且倍增系数大。基于三代负电子亲和势阴极技术研究了InGaAs光电倍增管, 利用GaAs衬底外延InGaAs, 将三代光电阴极截止波长从920 nm拓展至1100 nm, 阴极积分灵敏度340 uA/lm, 光谱峰值830 nm, 1000 nm辐射灵敏度6.2 mA/W, InGaAs性能达到日本滨松公司V8071U-76产品水平。在内置2块微通道板后, 整管电子倍增系数大于105。

Photomultiplier tube, with its large photo detection area, low dark current, high electron multiplication factor, gets advantage in single photon detection application. The InGaAs photomultiplier tube is made using Gen III photocathode technology. The photo response cutoff wavelength is extended from 920 nm to 1100 nm by InGaAs epitaxy on GaAs substrate. The photocathode sensitivity of 340 uA/lm, peak wavelength at 830 nm, 1000 nm radiation sensitivity of 6.2 mA/W, all these parameters make the tube perform at Hamamatsu InGaAs product (V8071U-76) level. With 2 MCP embedded, the InGaAs PMT has electron multiplication factor larger than 105.