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磁控共溅射法沉积的硅量子点SiNx薄膜的光谱特性

Spectral Characteristics of Si Quantum Dots Embedded in SiNx Thin Films Prepared by Magnetron Co-Sputtering

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摘要

采用双极脉冲和射频磁控共溅射沉积法在不同温度的Si(100)衬底和石英衬底上制备了富硅SiNx薄膜.在氮气氛中,于1 050 ℃下采用快速光热退火热处理,获得了包含硅量子点的SiNx薄膜.采用Fourier变换红外光谱、Raman光谱、掠入射X射线衍射和光致发光光谱对退火后的薄膜样品进行了表征.结果显示:Fourier变换红外光谱中出现了富硅Si—N键,表明薄膜为富硅SiNx薄膜;当衬底温度不低于200 ℃时,薄膜样品的拉曼光谱中出现了硅纳米晶的Si—Si振动横光学模,掠入射X射线衍射中出现了明显的Si(111)和Si(311)的衍射峰,证实了硅量子点的形成;发现存在一最佳衬底温度(300 ℃),该条件下获得的硅量子点的数量和晶化率最高;衬底温度为300和400 ℃的样品的光致发光光谱中均有3个可见荧光峰,结合拉曼光谱结果,用纳米晶硅的量子限域效应和辐射复合缺陷态对荧光峰进行了合理解释;由光致发光光谱计算出的衬底温度为300和400 ℃的样品的硅量子点平均尺寸分别为3.5和3.4 nm.这些结果有助于优化含硅量子点的SiNx薄膜的制备参数,在硅基光电子器件的应用方面有重要意义。

Abstract

The silicon-rich SiNx films were fabricated on Si(100) substrate and quartz substrate at different substrate temperatures varying from room temperature to 400 ℃ by bipolar pulse ane RF magnetron co-sputtering deposition technique.After deposition,the films were annealed in a nitrogen atmosphere by rapid photo-thermal annealing at 1 050 ℃ for 3 minutes.This thermal step allows the formation of the silicon quantum dots.Fourier transform infrared spectroscopy,Raman spectroscopy,grazing incidence X-ray diffraction and photoluminescence spectroscopy were used to analyze the bonding configurations,microstructures and luminescence properties of the films.The experimental results showed that:silicon-rich Si-N bonds were found in Fourier transform infrared spectra,suggesting that the silicon-rich SiNx films were successfully prepared;when the substrate temperature was not lower than 200 ℃,the Raman spectra of the films showed the transverse optical mode of Si-Si vibration,while the significant diffraction peaks of Si(111) and Si(311) were shown in grazing incidence X-ray diffraction spectra,confirming the formation of silicon quantum dots;our work indicated that there was an optimal substrate temperature(300 ℃),which could significantly increase the amount and the crystalline volume fraction of silicon quantum dots;three visible photoluminescence bands can be obtained for both 300 ℃ sample and 400 ℃ sample,and in combination with Raman results,the emission peaks were reasonably explained by using the quantum confinement effect and radiative recombination defect state of Si nanocrystals;the average size of the silicon quantum dots is 3.5 and 3.4 nm for the 300 ℃ sample and 400 ℃ sample,respectively.These results are useful for optimizing the fabrication parameters of silicon quantum dots embedded in SiNx thin films and have valuable implications for silicon based photoelectric device applications.

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中图分类号:O484.5

DOI:10.3964/j.issn.1000-0593(2015)07-1770-04

基金项目:国家自然科学基金项目(51362031,U1037604),四川省教育厅资助科研项目(15ZB0317)资助

收稿日期:2014-04-03

修改稿日期:2014-07-15

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作者单位    点击查看

陈小波:云南师范大学可再生能源材料先进技术与制备教育部重点实验室,太阳能研究所, 云南 昆明 650500四川文理学院物理与机电工程学院, 四川 达州 635000
杨雯:云南师范大学可再生能源材料先进技术与制备教育部重点实验室,太阳能研究所, 云南 昆明 650500
段良飞:云南师范大学可再生能源材料先进技术与制备教育部重点实验室,太阳能研究所, 云南 昆明 650500
张力元:云南师范大学可再生能源材料先进技术与制备教育部重点实验室,太阳能研究所, 云南 昆明 650500
杨培志:云南师范大学可再生能源材料先进技术与制备教育部重点实验室,太阳能研究所, 云南 昆明 650500
宋肇宁:Department of Physics and Astronomy,University of Toledo,Toledo,OH 43606,USA

联系人作者:陈小波(chenxbok@126.com)

备注:陈小波,1982年生,云南师范大学太阳能研究所博士研究生.

【1】Nguyen P D,Kepaptsoglou D M,Ramasse Q M,et al.Physical Review B,2012,85(8):085315.

【2】Huang R,Song J,Wang X,et al.Optics Letters,2012,37(4):692.

【3】Rodriguez-Gómez A,García-Valenzuela A,Haro-Poniatowski E,et al.Journal of Applied Physics,2013,113(23):233102.

【4】LIAO Wu-gang,ZENG Xiang-bin,WEN Guo-zhi,et al(廖武刚,曾祥斌,文国知,等).Acta Physica Sinica(物理学报),2013,62(12):126801.

【5】Cen Z H,Chen T P,Liu Z,et al.Optics Express,2010,18(19):20439.

【6】Ha R,Kim S,Kim H J,et al.Journal of Nanoscience and Nanotechnology,2012,12(2):1448.

【7】Li P L,Gau C,Liu C W.Thin Solid Films,2013,529:185.

【8】Mavilla N R,Solanki C S,Vasi J.Physica E:Low-Dimensional Systems and Nanostructures,2013,52:59.

【9】Delachat F,Carrada M,Ferblantier G,et al.Nanotechnology,2009,20:415608.

【10】Jiang L,Zeng X,Zhang X.Journal of Non-Crystalline Solids,2011,357(10):2187.

【11】Wang M,Li D,Yuan Z,et al.Applied Physics Letter,2007,90(13):131903.

【12】Liao W,Zeng X,Wen X,et al.Journal of Electronic Materials,2013,42(12):3445.

引用该论文

CHEN Xiao-bo,YANG Wen,DUAN Liang-fei,ZHANG Li-yuan,YANG Pei-zhi,SONG Zhao-ning. Spectral Characteristics of Si Quantum Dots Embedded in SiNx Thin Films Prepared by Magnetron Co-Sputtering[J]. Spectroscopy and Spectral Analysis, 2015, 35(7): 1770-1773

陈小波,杨雯,段良飞,张力元,杨培志,宋肇宁. 磁控共溅射法沉积的硅量子点SiNx薄膜的光谱特性[J]. 光谱学与光谱分析, 2015, 35(7): 1770-1773

被引情况

【1】陈璟涵,姚文清,朱永法. 射频磁控溅射法制备氮化硅基ZnO薄膜的光致发光性能研究. 光谱学与光谱分析, 2017, 37(2): 391-393

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