通过紫外臭氧和等离子体处理两种方式, 对ITO表面进行了处理。将处理之后的ITO玻璃应用于单层有机电致发光器件(SLOLED)中, 探究两种表面处理方式对改善器件性能的影响差别。实验结果表明, 以等离子体处理之后的基片所得到的器件性能要明显优于紫外臭氧处理。基于等离子体表面处理方式, 引入了MoO3和HAT-CN两种缓冲层材料, 研究了这两种材料对SLOLED器件性能的影响。实验结果表明, 以HAT-CN为缓冲层的SLOLED表现出更优越的器件性能。

ITO anode was modified utilizing UV-ozone or plasma technique and applied to fabricate single-layer organic light-emitting devices (SLOLEDs). The effects of the two methods on the device performance were researched. The experiment results indicate that the devices with plasma modifying manifest better performance than the devices with UV-ozone modifying. Based on plasma technique, further, two sort of buffer material MoO3 and HAT-CN were introduced to fabricate SLOLEDs. As a result, the devices using HAT-CN as buffer material denote better performance.