多晶硅太阳能电池组件以它显著的综合成本优势被广泛应用.铸锭多晶硅的晶体缺陷特征与其电池转换效率有着强烈的关联性.晶体的底部和顶部缺陷密度高,对应的电池转换效率低(14.5~15.5%)；晶体中部因为较低的缺陷密度,对应着较高的电池转换效率(16.5~17.5%).不同种类的晶体缺陷对电池效率的影响又不尽相同,比如位错等顽固性缺陷会保留至终,而间隙态金属杂质等可去除的缺陷则会在电池制备过程中得以消除.

With remarkable advantage of comprehensive cost, multicrystalline based photovoltaic module products become the most competitive and widely used PV products. A strong correlation was found between crystal defects of multicrystalline silicon and the cell efficiency thereby. The defect density at the bottom and top brick is very high, as a result, the corresponding cell efficiency is low (14.5~15.5%). The cell efficiency of the wafers from the middle position of brick is high (16.5~17.5%) due to the low defect density. However, different kinds of defects exert different influence on the cell performance. For instance, some stable defects (such as dislocation) will survive at the final cell, and some other defects (such as interstitial metal impurities) are removed during the cell process.