采用 ACST公司准垂直结构混频二极管对 0.45 THz次谐波混频器进行优化设计。提出一种电路拓扑结构，使得电路结构紧凑且易于匹配。在对二极管结构分析与建模的基础上，利用射频电路仿真软件 ADS及电磁场仿真软件 HFSS对混频器电路及结构进行整体优化设计，得到理想情况下单边带变频损耗最小值 6 dB，三分贝带宽大于 30 GHz，所需本振驱动功率 3.8 mW。仿真结果表明，该电路拓扑结构适用于采用反向并联肖特基二极管对实现次谐波混频器设计。

A sub-harmonic 0.45 THz mixer is optimized and designed with quasi-vertical Schottky mixer diodes of ACST. A circuit topology which is compact and easily to be matched is proposed. Based on the diode structure analysis and modeling, the mixer circuits and structure are optimized as a whole by using an RF circuits simulation software(ADS) and an electromagnetic field simulation software(HFSS). The simulation results reveal that minimum Single Side Band(SSB) conversion loss is about 6 dB with 3.8 mW of local oscillator power, and -3 dB bandwidth is more than 30 GHz. The circuit topology is suitable for the use of anti-parallel Schottky diodes to achieve sub-harmonic mixer designs.