太赫兹科学与电子信息学报, 2015, 13 (4): 544, 网络出版: 2016-01-26  

平面肖特基二极管的制作

Fabrication of planar Schottky barrier diode
作者单位
中国工程物理研究院激光聚变研究中心,四川绵阳 621999
摘要
为研究制作 THz频段下工作的肖特基二极管器件,系统研究了平面肖特基二极管的制作工艺。通过分子束外延 (MBE)生长了掺杂浓度分别为 5×1018 cm -3的缓冲层和 2×1017 cm -3的外延层,并研究温度对厚度的影响,使得膜层厚度控制良好,晶格完整。通过参数控制,减小了等离子体增强化学气相沉积 (PECVD)的 SiO2钝化层应力,使压指结构的翘曲情况得以改善。研究了不同退火温度下欧姆接触的情况,使接触电阻率减小到 0.8×10-7 Ω/cm2。用电子束光刻和干法刻蚀制作了亚微米级的阳极区域,结合 GaAs湿法刻蚀的速率控制,完成了表面沟道的制作,制作出完整的平面肖特基二极管。通过 I-U曲线理论计算,二极管的截止频率达到太赫兹量级,为后续工作奠定了基础。
Abstract
For the fabrication of Schottky barrier diode working under Terahertz(THz) frequency, the whole fabrication process of planar Schottky barrier diode is studied, especially on materials growth, ohm contact, fabrication of anode, trench etching. Suffer layer and epitaxial layer are grown on GaAs substrate by Molecular Beam Epitaxy(MBE), with doping concentration of 5×1018 cm-3 and 2×1017 cm-3 respectively, which are well controlled on thickness and lattice perfection by controlling the temperature. Through parameter controlling, the stress of SiO2 passivation layer obtained by Plasma Enhanced Chemical Vapor Deposition(PECVD) is reduced, which therefore alleviates the bending of finger. The ohm contact resistivity is reduced to 0.8×10-7 Ω/cm2 by optimizing the annealing temperature. The anode is fabricated by e-beam lithography and dry etching, and the trench is fabricated by controlled GaAs wet etching, then the complete planar Schottky diode is obtained. According to the calculation with I -U curve, the cut-off frequency of diodes can reach 1 THz. These studies can lay a fo undation for following work.

罗跃川, 赵妍, 沈昌乐, 阎大伟. 平面肖特基二极管的制作[J]. 太赫兹科学与电子信息学报, 2015, 13(4): 544. LUO Yuechuan, ZHAO Yan, SHEN Changle, YAN Dawei. Fabrication of planar Schottky barrier diode[J]. Journal of terahertz science and electronic information technology, 2015, 13(4): 544.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!