半导体光电, 2015, 36 (5): 722, 网络出版: 2015-11-30
黏附层以及退火气氛对Au/Si共晶体系中硅扩散的影响研究
Effect of Adhesion Layer and Annealing Ambient on the Diffusion in Si/Au Eutectic System
摘要
采用真空蒸镀方法在Si衬底上制备了Si/Au、Si/Ni/Au和Si/Ti/Au结构多层膜,进行多种条件下的退火实验,研究了不同黏附层对Au/Si共晶体系中硅扩散的影响。实验结果表明,黏附层对硅的扩散起到阻挡作用,Ti层与Ni层作为阻挡层在较低温度下发生失效,退火气氛对阻挡层的失效具有显著影响。这表明Au/Si体系中扩散阻挡层失效的机制并不是直接的固相反应。文章提出势垒模型来解释扩散阻挡层的失效机制。
Abstract
Au,Ni/Au,and Ti/Au layers were deposited and annealed on Si substrates to investigate the influence of adhesion (barrier) layer on low temperature silicon diffusion in Si/Au eutectic system. It is demonstrated that the adhesion layer acts as a diffusion barrier which reduces the diffusion of Si into Au. However this fails at a relatively low temperature. It is observed that annealing ambient has significant influence on the breaking down of diffusion barrier. Potential barrier model is proposed to explain the failure mechanism.
佟路, 戴姜平, 谢自力, 修向前, 赵红, 陈鹏, 张荣, 施毅, 韩平, 郑有炓. 黏附层以及退火气氛对Au/Si共晶体系中硅扩散的影响研究[J]. 半导体光电, 2015, 36(5): 722. TONG Lu, DAI Jiangping, XIE Ziii, XIU Xiangqian, ZHAO Hong, CHEN Peng, ZHANG Rong, SHI Yi, HAN Ping, ZHENG Youdou. Effect of Adhesion Layer and Annealing Ambient on the Diffusion in Si/Au Eutectic System[J]. Semiconductor Optoelectronics, 2015, 36(5): 722.