采用低压金属有机物化学气相沉积(LPMOCVD)设备,在(100)面GaSb单晶衬底上生长了高质量的InAsSb材料。分析了InAs/GaSb超晶格红外材料在不同生长条件下的生长质量,对器件材料结构进行了表征,并进行了理论分析和优化生长。采用X射线双晶衍射原子力显微镜对其外延薄膜的单晶质量进行分析,得到外延层与衬底材料的晶格失配仅为-0.43%。通过调节过渡层材料来减小界面处的应变,提高材料的生长质量,利用光致发光谱对材料做了检测分析。给出了InAsSb材料的LPMOCVD生长的参数分析和测量分析,为以后生长和分析InAsSb材料提供了很好的基础。

The InAsSb material was grown on the the (100) plane of the GaSb single crystal substrate by lowpressure metal organic chemical vapor deposition (LPMOCVD) equipment. The growth quality of InAs/GaSb superlattices obtained under different growth conditions was analyzed. The device structure was characterized and the theoretical analysis and growth optimization were given. The lattice mismatch of only -0.43% between the epitaxial layer and the substrate was obtained by the Xray double crystal diffraction measurements. By adjusting the intermediate layer,the strain at the interface was reduced and quality of the growth was improved. Test of InAsSb were provided by photoluminescence. Analysis on parameters and measurements of InAsSb provides a good foundation for the growth of InAsSb materials.