发光学报, 2015, 36 (11): 1289, 网络出版: 2015-11-30
热裂解活化硒对CIGS太阳电池开路电压的影响
Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells
摘要
考察了通过自主研发的高温热裂解辅助硒化装置所产生的高活性硒对CIGS薄膜结构和器件性能的影响。通过调节高温裂解系统的温度可以有效调节不同的硒活性。研究发现,第一台阶HC-Se气氛可以提高CIGS薄膜表面的Ga含量,使得CIGS薄膜内的Ga分布更加平缓,进而提高CIGS薄膜表面禁带宽度。而且HC-Se气氛可以消除CIGS“两相分离”现象。两种因素的共同作用使得CIGS薄膜太阳电池的开路电压提高了34.6%。电池转换效率从6.02%提升至8.76%,增长了45.5%。
Abstract
The influence of cracking selenium on the structure and device parameters of Cu(In1-xGax)-Se2 (CIGS) thin films was investigated. The activity of cracked selenium can be controlled by moderating the temperature of thermal cracking system employed in our self-designed selenization furnace. The HC-Se atmosphere can enhance the Ga concentration on the film surface and increase the band-gap energy of the CIGS film surface. In addition,HC-Se atmosphere can alleviate the “phase separation”. Consequently,Voc value of the solar cell increases about 34.6%. The device conversion efficiency using the novel thermal-cracking system increases by about 45.5% from 6.02% to 8.76%.
李光旻, 刘玮, 林舒平, 李晓东, 周志强, 何青, 张毅, 刘芳芳, 孙云. 热裂解活化硒对CIGS太阳电池开路电压的影响[J]. 发光学报, 2015, 36(11): 1289. LI Guang-min, LIU Wei, LIN Shu-ping, LI Xiao-dong, ZHOU Zhi-qiang, HE Qing, ZHANG Yi, LIU Fang-fang, SUN Yun. Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells[J]. Chinese Journal of Luminescence, 2015, 36(11): 1289.
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