基于电磁场、半导体物理及热力学方程的半导体器件多物理场模型方程组共同描述了器件内部的电热特性。而半导体器件在反向电压作用下，会发生碰撞电离及雪崩击穿现象。采用多物理场计算方法仿真型号为HSMS-282C的肖特基二极管的雪崩击穿现象，仿真结果与实验测量结果吻合，表明该算法能准确表征二极管物理特性，并对效应现象给出物理机理解释。

The multi-physics simulation algorithm is employed for analyzing the damage of semiconductor devices when high power microwave is injected. The principle and procedure of the multi-physics simulation is briefly introduced. The expression of the carrier ionization rate in the equations of semiconductors physical model is introduced to simulate the avalanche breakdown within Schottky diode. The multi-physics simulation is employed for the analysis of ionization effect and avalanche breakdown of HSMS-282C Schottky diode. The accuracy of the method is validated through comparison of its simulation results with the measurement data. The method can provides useful physical mechanisms for better understanding of the behavior avalanche breakdown within diode.