通过在常规横向PNP晶体管基区表面氧化层上淀积栅电极，制作了可以利用栅极偏置调制基区表面势的栅控横向PNP晶体管。对无栅极偏置电压和偏置电压分别为-10 V和10 V的栅控横向PNP晶体管，在西安脉冲反应堆上开展注量为2×10^{12,4×1012, 6×1012, 8×1012，1×1013 cm-2的中子辐照实验，研究基区表面势的增加和降低对栅控横向PNP晶体管中子位移损伤退化特性的影响。研究结果表明，基区表面势的增加引起栅控横向PNP晶体管共射极电流增益倒数的变化量随辐照中子注量的退化速率增加，基区表面势的降低对位移损伤退化速率无明显影响。}

A gate-controlled lateral PNP bipolar transistor has been manufactured by means of depositing a gate electrode on the oxide layer above the active base region of the conventional lateral PNP bipolar transistor, whose base surface potential can be adjusted by changing the bias condition of the gate. Neutron radiation effect experiments have been accomplished on the gate-controlled lateral PNP bipolar transistors whose bias voltage of the gate is zero, -10 V and 10 V respectively to investigate the influence of base surface potential on neutron displacement degradation rate. The experiments have been performed at Xi’an pulsed reactor and the neutron fluence is 2×10^{12, 4×1012, 6×1012, 8×1012, 1×1013 cm-2, respectively. The results indicate that the increased base surface potential makes the change of the reciprocal of the common emitter current gain degrade with neutron fluence more rapidly and the decreased base surface potential has no obvious influence on the degradation rate.}