在CST Particle Studio环境下建立了长径比为40的铅玻璃MCP的三维结构，将有限积分法与蒙特卡罗方法相结合，模拟了直流和高斯脉冲偏置下微通道内二次电子倍增过程，得到了通道轴向二次电子云密度的动态分布曲线。结果显示，二次电子云在通道轴向成高斯分布；在直流偏置下电子云在漂移过程中密度逐渐增大，分布逐渐变得集中，当电子云漂移至靠近输出电极位置时密度达到最大；在高斯偏置下，脉宽对电子倍增过程有决定性影响，当脉宽大于二次电子平均渡越时间时，倍增过程与直流偏置相似。

In this paper, the three-dimensional structure of a lead glass MCP was established under CST Particle Studio environment. The Finite Integration Method and the Monte Carlo Method were combined to simulate the multiplication process of secondary electron both under DC and Gaussian bias voltages. The dynamic distribution curves of charge density of secondary electron cloud along the axis of microchannel were obtained. The results show that the distribution of charge density of secondary electron cloud obeys Gaussian distribution. Under DC bias voltage, the density of secondary electron cloud is gradually increasing during the drift process, when the electron cloud drift to the position near the output electrode, the charge density reaches the maximum. Under Gaussian bias voltage, the pulse width has a decisive effect on the multiplication process of secondary electrons, when the pulse width is wider than the average transit time of secondary electrons, the multiplication process is similar to that under DC bias voltage.