激光与光电子学进展, 2016, 53 (2): 023101, 网络出版: 2015-12-25   

GexAsySe1-x-y硫系玻璃薄膜拉曼光谱分析 下载: 530次

Structural Analysis of GexAsySe1-x-y Chalcogenide Glass Thin-Films by Raman Spectroscopy
作者单位
北京工业大学应用数理学院, 北京 100124
摘要
采用热蒸镀法,在石英基底上制备了不同化学组分的GexAsySe1-x-y 硫系玻璃薄膜,并对其拉曼光谱进行测量,旨在分析化学组分对薄膜内部结构的影响。分析了波数位于100~350 cm-1范围内薄膜拉曼光谱的演变,用高斯曲线对拉曼光谱进行分峰拟合。结果表明,样品在190 cm-1 处Ge-Se 振动模式随着Ge 和As 含量的增加而变强;随着平均配位数(MCN)的增加,As-Se 振动模式减弱,位于225 cm-1和250 cm-1处的两个拉曼峰逐渐合并,并向高波数区域延伸;在Ge 含量高的样品中,170~180 cm-1处的拉曼峰是由薄膜内部键缺陷造成的。
Abstract
Thin films of GexAsySe1-x-y chalcogenide glasses with different chemical compositions are deposited by thermal evaporation from bulk material in various GexAsySe1-x-y thin films. The Raman spectroscopy of GexAsySe1-x-y chalcogenide glass films is studied to understand the influence of chemical composition on internal film structure. The evolution of Raman features in the wavenumber range from 100 cm-1 to 350 cm-1 is analyzed. The Raman features are fitted into different peak-fitting functions. The intensity of Ge-Se vibrational mode at 190 cm-1 increases with the increasing of concentration of Ge and As. With the increasing of the mean coordination number (MCN), the intensity of As-Se vibrational mode decreases. Meanwhile, the two Raman shift modes located at 225 cm-1 and 250 cm-1 gradually merge and extend to high wavenumber for high MCN samples. In addition, in the films with high Ge content, the Raman features in the wavenumber range from 170 cm-1 to 180 cm-1 is caused by the defect modes.

李宬汉, 王丽, 甘渝林, 苏雪琼. GexAsySe1-x-y硫系玻璃薄膜拉曼光谱分析[J]. 激光与光电子学进展, 2016, 53(2): 023101. Li Chenghan, Wang Li, Gan Yulin, Su Xueqiong. Structural Analysis of GexAsySe1-x-y Chalcogenide Glass Thin-Films by Raman Spectroscopy[J]. Laser & Optoelectronics Progress, 2016, 53(2): 023101.

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