Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices

Bo SHEN

Frontiers of Optoelectronics, 2015, 8 (4): 456, 网络出版: 2016-01-06

Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices

Bo SHEN ^*

作者单位

Research Center for Wide Bandgap Semiconductors and State Key Laboratory of Artificial Microstructures and Mesoscopic Physics,School of Physics, Peking University, Beijing 100871, China

摘要

Abstract

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Bo SHEN. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices[J]. Frontiers of Optoelectronics, 2015, 8(4): 456. Bo SHEN. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices[J]. Frontiers of Optoelectronics, 2015, 8(4): 456.