Photonics Research, 2015, 3 (2): 02000038, Published Online: Jan. 6, 2016  

Raman tensor of AlN bulk single crystal Download: 757次

Author Affiliations
1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-Sen University, Guangzhou 510275, China
2 Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China
3 Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
Abstract
The angle dependence of optical phonon modes of an AlN bulk single crystal from the m-plane (1100) and c-plane (0001) surfaces, respectively, is investigated by polarized Raman spectroscopy in a backscattering configuration at room temperature. Corresponding Raman selection rules are derived according to measured scattering geometries to illustrate the angle dependence. The angle-dependent intensities of phonon modes are discussed and compared to theoretical scattering intensities, yielding the Raman tensor elements of A1(TO), E22 , E1(TO), and A1(LO) phonon modes and the relative phase difference between the two complex elements of A1_TO_. Furthermore, the Raman tensor of wurtzite AlN is compared with that of wurtzite ZnO reported in previous work, revealing the intrinsic differences of lattice vibration dynamics between AlN and ZnO.

Wei Zheng, Ruisheng Zheng, Feng Huang, Honglei Wu, Fadi Li. Raman tensor of AlN bulk single crystal[J]. Photonics Research, 2015, 3(2): 02000038.

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