Silicon high-speed binary phase-shift keying modulator with a single-drive push–pull high-speed traveling wave electrode

Jinting Wang; Linjie Zhou; Haike Zhu; Rui Yang; Yanyang Zhou; Lei Liu; Tao Wang; Jianping Chen

doi:doi:10.1364/PRJ.3.000058

Photonics Research, 2015, 3 (3): 03000058, Published Online: Jan. 23, 2019

Silicon high-speed binary phase-shift keying modulator with a single-drive push–pull high-speed traveling wave electrode

Jinting Wang ¹Linjie Zhou ^1,*Haike Zhu ¹Rui Yang ¹Yanyang Zhou ¹Lei Liu ²Tao Wang ²Jianping Chen ¹

Author Affiliations

¹ State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

² Transmission Technology Research Department, Huawei Technologies Co. Ltd., Shenzhen 518129, China

Integrated optics devices Integrated optoelectronic circuits Waveguide modulators

Abstract

We demonstrate binary phase shift keying (BPSK) modulation using a silicon Mach–Zehnder modulator with a π-phase-shift voltage (Vπ) of 4.5 V. The single-drive push–pull traveling wave electrode has been optimized using numerical simulations with a 3 dB electro-optic bandwidth of 35 GHz. The 32 Gb/s BPSK constellation diagram is measured with an error vector magnitude of 18.9%.

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Jinting Wang, Linjie Zhou, Haike Zhu, Rui Yang, Yanyang Zhou, Lei Liu, Tao Wang, Jianping Chen. Silicon high-speed binary phase-shift keying modulator with a single-drive push–pull high-speed traveling wave electrode[J]. Photonics Research, 2015, 3(3): 03000058.

Silicon high-speed binary phase-shift keying modulator with a single-drive push–pull high-speed traveling wave electrode

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