利用椭偏光谱术与XRD对钛掺杂Ge₂Sb₂Te₅薄膜中钛元素对体系的光学性质及其微结构的影响进行了实验研究.进而对该薄膜进行变温阻抗实验表明，钛掺杂Ge₂Sb₂Te₅薄膜与未掺杂的薄膜相比具有更好的热稳定性.基于对薄膜样品的数据保持能力测试的实验数据，经阿伦纽斯外推处理可知，钛掺杂Ge₂Sb₂Te₅薄膜样品的10年数据保持温度要高于未掺杂Ge₂Sb₂Te₅薄膜样品.本文的实验结果均证实，钛掺杂Ge₂Sb₂Te₅薄膜更适合应用于相变随机存取存储器中.

The influence of Ti dopant in the titanium-doped Ge₂Sb₂Te₅ film upon its optical and structural characteristics has been investigated by spectroscopic ellipsometry and x-ray diffraction. Temperature-dependent resistance tests have further revealed that Ti-doped Ge₂Sb₂Te₅ films have better thermal stability than undoped one. Based on the Arrhenius extrapolation results from data retention tests, the endurance temperature corresponding to 10-year data retention of a Ti-doped Ge₂Sb₂Te₅ cell is higher than that of a common Ge₂Sb₂Te₅ cell without dopant. All these experimental results have confirmed that the Ti-doped Ge₂Sb₂Te₅ films are more suitable for the application in phase-change random access memory.