为了研究异质结InP/InGaAs探测器帽层的欧姆接触特性，采用Au/p-InP传输线模型(TLM)，对比不同退火温度下的接触特性，在480℃、30 s的退火条件下实现室温比接触电阻为3.84×10^-4Ω·cm²，同时，对欧姆接触的温度特性进行了研究，发现随着温度降低比接触电阻增加，在240~353 K温度范围内界面电流传输主要为热电子场发射机制（TFE）；240 K以下，接触呈现肖特基特性.利用扫描电子显微镜（SEM）和X射线衍射仪（XRD）分别对界面处的扩散程度和化学反应进行了分析，发现经过480℃、30 s退火后样品界面处存在剧烈的互扩散，反应产物Au₁₀In₃有利于改善Au/p-InP的接触性能.

The contact characteristics of Au/ p-InP in hetero-junction InP/InGaAs detector were studied in this work. Under the annealing condition of 480℃ for 30s, the ohmic contact was formed with the room-temperature special contact resistance 3.84×10^-4Ω·cm². Temperature-dependent characteristics of ohmic contact were investigated. The results indicate that the special contact resistance increases with decreasing temperature, the current transmission mechanism at the interface is thermion-field emission mechanism (TFE) at the temperature of 243 K to 353 K; while below 240 K, the contact performance presents schottky property. By means of scanning electron microscope (SEM) and X-ray diffractometer, the diffusion degree and metallurgical reaction at the Au/InP interface were investigated，and the penetration degree is very heavy at the interface of sample after annealed at 480℃for 30s and the generation of Au₁₀In₃ produced by metallurgical reaction contributes to improve the contact performance of Au/p-InP.