采用了磁控溅射制备Cu-In-Al金属前驱体薄膜，后硒化快速退火得到铜铟铝硒（Cu(In, Al)Se₂，CIAS）薄膜.研究了硒化温度对CIAS薄膜晶体结构和光学性质的影响.研究发现CIAS薄膜的晶体结构依赖于硒化温度，其禁带宽度随硒化温度升高发生红移.研究结果表明，CIAS薄膜的最佳硒化温度为540 ℃，其晶体结构为纯黄铜矿结构，禁带宽度为1.34 eV，对应太阳电池理论最大效率的吸收层材料禁带宽度.

Cu(In, Al)Se2 (CIAS) thin films have been obtained by rapid thermal processing selenization of magnetron sputtering Cu-In-Al precursor thin films. The influence of selenization temperatures on the structural and optical properties of CIAS thin films has been investigated. The result reveals that the crystal structure of CIAS thin films depends on selenization temperature and the band gap energy has a red shift with the increase of selenization temperature. It is noted that the optimum selenization temperature of the CIAS thin films is 540℃, and it has a pure chalcopyrite structure with a band gap energy of 1.34 eV, which corresponding to the band gap energy of the theoretical maximum efficiency of solar cell absorber layer materials.