应用回流浸渍法对非晶的纳米多孔Al₂O₃薄膜进行掺杂,制备了非晶的Al₂O₃:Ce薄膜。用场发射扫描电子显微镜观察了样品掺杂前后的形貌,且从EDS结果可以看出薄膜中铈的含量是随着掺杂液浓度的增加而增加的。X射线光电子能谱(XPS)表明Al₂O₃:Ce薄膜中有三价的铈离子形成。Al₂O₃:Ce薄膜的光致发光谱和激发谱与掺杂前相比明显发生了变化,且发射谱中出现了双峰结构,峰位分别位于380 nm和400 nm,本文分析讨论了掺杂前后光谱发生变化的原因和发光机制。另外,比较了不同浓度下掺杂的Al₂O₃:Ce薄膜的光致发光谱,得出随掺杂液浓度的增加光致发光强度呈先增加后减小的趋势,且最佳掺杂浓度为0.2 mol。

The amorphous Al₂O₃:Ce thin films have been prepared by doping in the nanoporous Al₂O₃ films using reflux impregnation method.The results of the field emission scanning electron microscope(FESEM)show that the morphology of doped thin films is changed,and the results of the x-ray dispersive energy spectrum(EDS)show that the content of Ce in the films increases with the increase of concentrations of the doped solution.The x-rays photoelectron spectroscopy(XPS)reveals that there exist Ce3+ions in the Al₂O₃:Ce thin films.The photoluminescence(PL)emission and excitation spectra of Al₂O₃:Ce thin films are different from undoped films,and the emission spectrum of Al₂O₃:Ce thin films has two peaks,centered at 380 nm and 400 nm,respectively.The spectra change reasons and the luminescence mechanisms have been discussed for the doped films.In addition,Al₂O₃:Ce films under different concentration of doped solution have been prepared.The PL emission spectra of Al₂O₃:Ce films show that the intensity of PL firstly increases with the increase of concentrations of doped solution then decreases with a further increase of concentrations of doped solution and reaches a maximum value at 0.2 mol.