中国光学, 2015, 8 (4): 567, 网络出版: 2016-01-25   

白光干涉测量超薄透明电极ITO薄膜的厚度

Measurement of ITO transparent electrode film thickness with white-light interferometer
作者单位
筑波大学 数理物质科学研究科 伊藤研究室, 日本 筑波 3050005
摘要
随着平板显示技术的发展, 透明电极ITO膜的厚度越来越薄。为了测试这种极薄的ITO膜, 本文通过改进已有的频域分析算法, 以便测试膜厚在20~150 nm之间的ITO膜。与现有算法相比, 该算法有效改进了各个波长的位相解析精度。实验结果表明, 待测透明电极薄膜的厚度为90~104 nm, 其结果和标定值一致, 证明了该算法能够测量膜厚小于100 nm的透明电极ITO薄膜。
Abstract
The transparent electrode thin film of ITO is widely used to implement the touch function of flat panel display(FPD). Its physical thickness has a great impact on touch panel operation, therefore it is very important to measure the thickness of transparent electrode film. The frequency domain analysis algorithm has been used to measure film thickness. However, it is difficult to measure the very thin film. A new algorithm is proposed to measure the film thickness ranged from 20 nm to 150 nm. This algorithm aims to get the precision phase distribution due to multiple reflection of film. The experimental results show that the thickness of the measured transparent electrode film is 90-104 nm, which illustrates that there is no difference from the calibration value. This result proves that the new algorithm can be used to measure the very thin film of ITO within 100 nm.

陈凯, 雷枫, 伊藤雅英. 白光干涉测量超薄透明电极ITO薄膜的厚度[J]. 中国光学, 2015, 8(4): 567. CHEN Kai, LEI Feng, ITOH Masahide. Measurement of ITO transparent electrode film thickness with white-light interferometer[J]. Chinese Optics, 2015, 8(4): 567.

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