以高斯光束传输理论为基础，结合半导体激光器堆栈结构，建立了半导体激光器堆栈快轴方向光束传输理论模型，并引入单个半导体激光器阵列的发散角和指向性因子,对半导体激光器堆栈快轴方向光束质量计算方法进行了修正，最后通过实验对计算结果进行验证。结果显示，相对于实验测量值，该理论模型计算值的误差仅为2.14%，与修正前的计算误差24.16%和18.36%相比，在精度上有了很大程度的提高，因此，该方法可行，能更精确的反应堆栈快轴的光束质量。

Based on the Gaussian beam propagation theory, and combined with the structure of the laser diode stack, the fast axis beam model of the laser diode stacks was established. And considered with the divergence angle and directional factor of each diode laser array, the calculation for the fast axis beam quality of the diode laser stacks was amended which was finally verified by the experiment. The result shows that compared with the experimental measurements, the calculation error of this model is only 2.14%. Compared with the ones before amending, which are 24.16% and 18.36%, the new calculation method is improved a lot in accuracy and can reflect the fast axis beam quality of diode laser stacks more exactitudly.