红外与激光工程, 2015, 44 (3): 0934, 网络出版: 2016-01-26   

用于光子计数的InGaAs/InP SPAD设计

Design and characterization of InGaAs/InP single-photon avalanche diodes for photon counting
作者单位
西南技术物理研究所,四川 成都 610041
摘要
重点研究了InGaAs/InP SPAD的隧道贯穿电场、雪崩击穿电场、雪崩宽度与过偏电压的关系,提出了过偏电压的计算方法。分析了InGaAs/InP SPAD的基本特性即探测效率、暗计数率与其过偏电压、工作温度、量子效率、电场分布的依赖关系,提出了一种单光子InGaAs雪崩二极管的设计方法。设计制作了InGaAs/InP SPAD,并在门控淬灭模式下进行了单光子探测实验。结果表明:对于Φ200 μm的SPAD,在过偏2 V、温度-40 ℃条件下,探测效率(PDE)>20%(1 550 nm)、暗计数率(DCR)Φ20 kHz;对于Φ50 μm的SPAD,在过偏2.5 V、温度-40 ℃条件下,探测效率(PDE)>23%(1 550 nm)、暗计数率(DCR)2 kHz。最后对实验结果进行了分析和讨论。
Abstract
The tunneling breakdown electric field, avalanche breakdown electric field, multiplication region width depend on exceed breakdown voltage of InGaAs/InP SPAD was researched as a key point. The calculated method of exceed breakdown voltage was presented. The basic performance of single photon avalanche diode(SPAD) depends on their excess bias, multiplication region width, working temperature, electric-field distribution and quantum efficiency has been analyzed. According to these analysis, a designed solution of InGaAs/InP SPAD has been presented, and then the device was manufactured later. Under the conditions of -40 ℃ and exceed breakdown voltage over 2 V, the InGaAs/InP SPAD of Φ200 μm diameter exhibits dark count rates(DCR) below 20 kHz and photon detection efficiency(PDE) of 20%(1 500 nm). Under the conditions of -40 ℃ and exceed breakdown voltage over 2.5 V, the InGaAs/InP SPAD of Φ50 μm diameter exhibits dark count rates(DCR)below 2 kHz and photon detection efficiency(PDE) of23%(1 550 nm). Finally, the experimental results were analyzed.

纪应军, 石柱, 覃文治, 代千, 冯万鹏, 胡俊杰. 用于光子计数的InGaAs/InP SPAD设计[J]. 红外与激光工程, 2015, 44(3): 0934. Ji Yingjun, Shi Zhu, Qin Wenzhi, Dai Qian, Feng Wanpeng, Hu Junjie. Design and characterization of InGaAs/InP single-photon avalanche diodes for photon counting[J]. Infrared and Laser Engineering, 2015, 44(3): 0934.

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