采用直流磁控溅射法，结合氧化法热处理在硅基底上制备VO₂薄膜，通过SEM、XRD、XPS、FTIR红外透射率等测试，从多角度分析了氧化热处理对VO₂薄膜截面结构、晶相成分、成分价态、红外透射率相变特性的影响。实验分析表明，采用直流磁控溅射与氧化热处理相结合的方法，可获得主要成分为具有明显择优取向单斜金红石结构VO₂(011)晶体的氧化钒薄膜，氧化热处理有利于VO₂晶粒生长并增加薄膜致密性，同时其红外透射率具有明显相变特性，相变温度为60.5 ℃，3~5 μm、8~12 μm波段的红外透射率对比值达到99.5%，实现了对红外波段辐射的开关功能，适合应用于红外探测器的激光防护研究，同时可为深入研究对薄膜的氧化热处理提供参考依据。

VO₂ thin films were prepared by DC magnetron sputtering combined with oxidational annealed on Si substrate. SEM, XRD and XPS were employed to study the section, crystal composition, and valence of VO₂ thin films from various aspects, and the infrared transmission properties was analyzed by FTIR. The results of analysis show that, a better crystal orientation of monoclinic rutile structure VO₂ (011) crystal can be prepared through the method of DC magnetron sputtering combined with oxidational annealing, and the oxidational annealing is beneficial to the growing of VO₂ grain and compactness of thin films. The VO₂ thin films possesse a obvious phase transition properties, the transition temperature is 60.5 ℃, and the range of the change of infrared transmission rate at 3-5 μm and 8-12 μm has reached to 99.5%. The VO₂ thin films have achieved the function of switch in infrared transmission, which can be an ideal material for the research in protecting infrared detector of laser attacking, and provides references for further in-depth study on oxidational annealing.