Chinese Optics Letters, 2016, 14 (2): 022501, Published Online: Sep. 21, 2018
Short-wave infrared detector with double barrier structure and low dark current density Download: 889次
250.0040 Detectors 230.5160 Photodetectors 160.1890 Detector materials 060.5565 Quantum communications
Abstract
Short-wave infrared (SWIR) detectors combining AlAs / In 0.53 Ga 0.47 As / AlAs double barrier structure (DBS) with In 0.53 Ga 0.47 As absorption layer are fabricated by molecular beam epitaxy. By adding a p-charge layer, the dark current density of the detector is lowered by 3 orders of magnitude. The responsivity of the detector is tested at room temperature, which reaches 6000 A/W when the power of the incident light is 0.7 nW. The noise equivalent power (NEP) of the detector at 5 kHz is measured to be 3.77 × 10 14 W / Hz 1 / 2 at room temperature.
Yu Dong, Guanglong Wang, Haiqiao Ni, Kangming Pei, Zhongtao Qiao, Jianhui Chen, Fengqi Gao, Baochen Li, Zhichuan Niu. Short-wave infrared detector with double barrier structure and low dark current density[J]. Chinese Optics Letters, 2016, 14(2): 022501.