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高精度深紫外光学透射率测量装置的研制

Development of Device for High-Precision Deep Ultraviolet Optical Transmittance Measurement

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摘要

为了精确控制曝光剂量,需要精确测量光刻系统的光学透射率。采用了双光路对比的方法进行透射率测量,有效地消除了准分子激光器能量波动带来的透射率测量误差。并通过加入起偏器,消除了准分子激光器偏振态不稳定带来的误差。搭建了深紫外光学透射率测量装置,对1片可计算透射率的光学样品进行透射率测量,其测量结果与透射率理论计算结果基本一致。测量结果显示,该装置的测量重复性可达到0.3%。通过分光光度计对该光学样品进行测量,通过结果对比,该装置的测量结果与分光光度计的测量结果相差0.28%。另外,该装置应用灵活,可以测量光学系统的透射率,具有不受待测光学样品尺寸影响的优点。

Abstract

In order to accurately control the exposure dose, it is necessary to measure optical transmittance of lithography system accurately. A double-contrast method of optical transmittance measurement is introduced. It effectively eliminates the measurement error caused by an excimer laser energy fluctuation. In order to eliminate the measurement errors caused by diversification of excimer laser polarization, a polarizer is used in this equipment. The experimental setup is designed to measure the transmittance of an optical sample whose transmittance can be calculated accurately. The experimental results show that measurement results are consistent with theoretical calculations and the repeatability of measurement is less than 0.3%. The transmittance of optical sample is measured by the spectrophotometer, and the difference between the two kinds of equipment is 0.28% . Furthermore, the equipment has flexible application for transmittance measurement of optical system and advantage for not influenced by optical sample sizes.

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中图分类号:TH741;TN23;TH247

DOI:10.3788/cjl201643.0308002

所属栏目:测量与计量

收稿日期:2015-08-17

修改稿日期:2015-10-12

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作者单位    点击查看

陈明:中国科学院上海光学精密机械研究所, 上海 201800中国科学院大学, 北京 100049
谢承科:中国科学院上海光学精密机械研究所, 上海 201800
杨宝喜:中国科学院上海光学精密机械研究所, 上海 201800
黄惠杰:中国科学院上海光学精密机械研究所, 上海 201800

联系人作者:陈明(chenming@siom.ac.cn)

备注:陈明(1983—),男,博士研究生,主要从事高NA 光刻技术方面的研究。

【1】B Fay. Advanced optical lithography development, from UV to EUV[J]. Microelectronic Engineering, 2002, 61: 11-24.

【2】M Switkes, R R Kunz, R F Sinta, et al.. Immersion liquids for lithography in the deep ultraviolet[C]. SPIE, 2003, 5040: 690-699.

【3】Wang Fan, Wang Xiangzhao, Ma Mingying, et al.. An novel technique for measuring full image quality of lithography tools insitu[J]. Chinese J Lasers, 2006, 33(4): 543-548.
王帆, 王向朝, 马明英, 等. 一种新的光刻机多成像质量参数的原位检测技术[J]. 中国激光, 2006, 33(4): 543-548.

【4】Guo Liping, Huang Huijie, Wang Xiangzhao. Off-axis illumination for optical lithography[J]. Laser Journal, 2005, 26(1): 23-25.
郭立萍, 黄惠杰, 王向朝. 光学光刻中的离轴照明技术[J]. 激光杂志, 2005, 26(1): 23-25.

【5】Zhang Qiang, Hu Song, Yao Hanmin, et al.. Current progress of optical lithography in ASML[J]. Microfabrication Technology, 2002, 9 (3): 8-11.
张强, 胡松, 姚汉民, 等. ASML公司光学光刻技术最新进展[J]. 微细加工技术, 2002, 9(3): 8-11.

【6】Xing Shasha, Liao Zhijie, Lin Wumei. A lighting all systems and components in lithography transmittance measurement method: CN, 103345129 A[P]. 2013-10-09.
邢莎莎, 廖志杰, 林妩媚. 一种光刻机中照明全系统及各组件透过率的测量方法: 中国, 103345129 A[P]. 2013-10-09.

【7】Yuan Qiongyan, Wang Xiangzhao. Recent development of international mainstream lithographic tools[J]. Laser & Optoelectronics Progress, 2007, 44(1): 57-64.
袁琼雁, 王向朝. 国际主流光刻机研发的最新进展[J]. 激光与光电子学进展, 2007, 44(1): 57-64.

【8】Gong Yan, Zhang Wei. Present status and progress in 193 nm exposure system in lithography[J]. Chinese Journal of Optics and Applied Optics, 2008, 1(1): 25-34.
巩岩, 张巍. 193 nm 光刻曝光系统的现状及发展[J]. 中国光学与应用光学, 2008, 1(1): 25-34.

【9】Yu Yinshan, You Libing, Liang Xu, et al.. Progress of excimer lasers technology[J]. Chinese J Lasers, 2010, 37(9): 2253-2270.
余吟山, 游利兵, 梁勖, 等. 准分子激光技术发展[J]. 中国激光, 2010, 37(9): 2253-2270.

【10】Lu Jing. The Testing Technology Study for the Optical Capability of Visible Light Transmittance[D]. Changchun: Changchun University of Science and Technology, 2008: 1-5.
路婧. 光学系统可见光透过率测试技术研究[D]. 长春: 长春理工大学, 2008: 1-5.

【11】D H Tracy, F Y Wu. Exposure dose control techniques for excimer laser lithography[C]. SPIE, 1988, 922: 437-443.

【12】Liu Shiyuan, Wu Xiaojian. Real-time exposure dose control algorithm for DUV excimer lasers[J]. Acta Optica Sinica, 2006, 26(6): 878- 884.
刘世元, 吴小健. 深紫外准分子激光实时曝光剂量控制算法研究[J]. 光学学报, 2006, 26(6): 878-884.

【13】Cai Yanmin, Wang Xiangzhao, Huang Huijie. Design of Wollaston prism used for polarization illumination system in ArF lithography tool[J]. Chinese J Lasers, 2014, 41(6): 0616002.
蔡燕民, 王向朝, 黄惠杰. 用于ArF光刻机偏振照明系统的沃拉斯顿棱镜的设计[J]. 中国激光, 2014, 41(6): 0616002.

【14】Chen Jinxin, Xu Xiangyu, Wang Yu. Electrodes system design and electric field simulation research of ArF excimer laser[J]. Laser & Optoelectronics Progress, 2014, 51(1): 011402.
陈进新, 徐向宇, 王宇. ArF准分子激光光源电极系统设计及电场仿真研究[J]. 激光与光电子学进展, 2014, 51(1): 011402.

引用该论文

Chen Ming,Xie Chengke,Yang Baoxi,Huang Huijie. Development of Device for High-Precision Deep Ultraviolet Optical Transmittance Measurement[J]. Chinese Journal of Lasers, 2016, 43(3): 0308002

陈明,谢承科,杨宝喜,黄惠杰. 高精度深紫外光学透射率测量装置的研制[J]. 中国激光, 2016, 43(3): 0308002

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