发光学报, 2016, 37 (1): 50, 网络出版: 2016-03-22
溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管
Solution Processed HfInZnO Thin Film Transistors with HfSiOx Dielectrics Modified by Al2O3 Films
摘要
利用溶液法制备了以HfSiOx为绝缘层、HfInZnO为有源层、Al2O3为界面修饰层的TFT器件。HfSiOx薄膜经Al2O3薄膜修饰后, 薄膜表面粗糙度从0.24 nm降低至0.16 nm。Al2O3薄膜与HfSiOx薄膜之间的界面接触良好, 以Al2O3为界面修饰层的TFT器件整体性能得到提升, 具体表现为: 栅极电压正向和反向扫描过程中产生的阈值电压漂移显著减小, 器件的阈值电压和亚阈值摆幅降低, 迁移率与开关比增大。研究证明, 溶液法制备Al2O3薄膜适合作为改善器件性能的界面修饰层。
Abstract
Solution processed HfInZnO (HIZO) thin film transistors (TFTs) with HfSiOx dielectrics modified by Al2O3 layer were fabricated. After the Al2O3 layer was inserted, the optical transmittance of HfSiOx films was hardly changed and the surface root mean square (RMS) roughness was decreased from 0.24 to 0.16 nm. The excellent surface was benefited to improve the interface properties between dielectrics and semiconductors of HIZO TFTs. Furthermore, the characteristics of thin film transistors were improved. The threshold voltage shift between forward and reverse sweep was decreased obviously. Simultaneously, the threshold voltage and subthreshold voltage were decreased, and the on to off current ratios and mobility were increased. Above all, the experiment results indicate that Al2O3 film is fit for using in TFTs as the interface modification layer to improve TFTs performance.
高娅娜, 许云龙, 张建华, 李喜峰. 溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管[J]. 发光学报, 2016, 37(1): 50. GAO Ya-na, XU Yun-long, ZHANG Jian-hua, LI Xi-feng. Solution Processed HfInZnO Thin Film Transistors with HfSiOx Dielectrics Modified by Al2O3 Films[J]. Chinese Journal of Luminescence, 2016, 37(1): 50.