利用Advanced Physical Models of Semiconductor Devices (APSYS)理论对比研究了InGaN/AlInGaN 和 InGaN/GaN多量子阱作为有源层的InGaN基发光二极管的结构和电学特性。与InGaN/GaN 基LED 中GaN作为垒层材料相比，在AlInGaN材料体系中，通过调节AlInGaN中Al和In的组分可以优化器件的性能。当InGaN阱层材料中In组分为8%时，可以实现无应力的In0.08Ga0.92N/AlInGaN基 LED。在这种无应力结构中可以进一步降低大功率LED的“效率下降”(Effciency droop)问题。理论模拟结果显示，四元系AlInGaN作为垒层可以进一步减少载流子泄露，增加空穴注入效率，减少极化场对器件性能的影响。在In0.08Ga0.92N /AlInGaN量子阱中的载流子浓度、有源层的辐射复合率、电流特性曲线和内量子效率等方面都优于InGaN/GaN基LED。无应变AlInGaN垒层代替传统的GaN垒层后，能够得到高效的发光二极管，并且大电流注入下的“效率滚降”问题得到改善。

InGaN-based LEDs with InGaN/AlInGaN and InGaN/GaN multiple quantum wells (MQWs) were theoretically studied and compared by using the Advanced Physical Models of Semiconductor Devices (APSYS) simulation program, respectively. The carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and the internal quantum efficiency were investigated. The simulation results show that higher efficiency realized in the strain-free AlInGaN barrier instead of GaN.