因酞菁薄膜平面具有多电子共轭大π键结构, 本文采用异质诱导的方式对酞菁薄膜的生长特性进行了改善研究。采用高掺杂硅为栅极, 氧化硅为绝缘层, 生长α-四噻吩或p-六联苯薄膜为异质诱导层, 制备了酞菁铜有机薄膜晶体管。利用原子力显微镜研究薄膜生长特性, 并对比研究了2种诱导层对薄膜晶体管性能的影响。实验结果表明：α-四噻吩上生长的酞菁铜薄膜, 形貌呈片状, 而p-六联苯上生长的酞菁铜薄膜, 形貌呈针状, 均与单层酞菁铜棒状形貌不同。同时, α-四噻吩与p-六联苯薄膜上生长酞菁铜后, 两者晶体管电性能都有不同程度的提高, 均比单层酞菁铜提高了1~2个数量级, 表明α-四噻吩或p-六联苯对酞菁铜薄膜均有诱导效应, 可以获得高性能的有机薄膜晶体管。

The growth characteristics of phthalocyanine thin films were investigated by the method of heterogeneous induction due to planar electron conjugated bond structure of phthalocyanine thin film. Copper phthalocyanine organic thin film transistors were fabricated, which consist of high-doped silicon as the gate, the oxide silicon as the insulating layer, and the growth of α-tetrathiophene or para-hexaphenyl thin film as heterogeneous layer. The growth characteristics of the films were studied by atomic force microscopy. And the effect of two kinds of inducting layers on the properties of thin film transistors was contrastively investigated. The experimental results showed that copper phthalocyanine thin films grown on α-tetrathiophene were lamella morphology, and the copper phthalocyanine thin films grown on para-hexaphenyl were needle morphology, and they were different from rod shape of monolayer copper phthalocyanine. At the same time, the electric properties of two transistors were improved by the growth of copper phthalocyanine on α-tetrathiophene or para-hexaphenyl films, which were one or two orders of magnitude higher than the monolayer copper phthalocyanine. It was confirmed that the α-tetrathiophene and para-hexaphenyl films had induction effect on copper phthalocyanine thin films, and organic thin film transistor with high performance could be obtained.