半导体光电, 2016, 37 (1): 27, 网络出版: 2016-03-22
780nm波段低填充因子半导体激光器列阵的光束质量研究
Optical Quality of 780nm Low Filling Factor Diode Laser Array
摘要
为了获得高功率高光束质量激光输出, 设计并制备了一种780nm波段5发光单元列阵器件, 其采用10μm宽窄条形波导, 各发光单元中心间距为100μm, 填充因子仅为10%。在准连续注入电流由1.2A增加到2.5A条件下, 该器件的输出光束侧向光学参量积由0.666mm·mrad增加至0.782mm·mrad。注入电流为2.5A时, 该器件实现了单边准连续506mW的高光束质量激光输出。
Abstract
In order to obtain high power high optical quality lasing, a 780nm diode array device with five array units was designed. The device is fabricated with strip width of 10μm, separation between laser array units of 100μm and filling factor of 10%. The quasi-continuous wave injection current increases from 1.2A to 2.5A, the lateral beam parameter product of the device increases from 0.666mm·mrad to 0.782mm·mrad. When the injection current is 2.5A, the device achieves high optical quality lasing with an output power of 506mW from one cavtiy facet.
贾鹏, 秦莉, 陈泳屹, 李秀山, 张俊, 张建, 张星, 宁永强. 780nm波段低填充因子半导体激光器列阵的光束质量研究[J]. 半导体光电, 2016, 37(1): 27. JIA Peng, QIN Li, CHEN Yongyi, LI Xiushan, ZHANG Jun, ZHANG Jian, ZHANG Xing, NING Yongqiang. Optical Quality of 780nm Low Filling Factor Diode Laser Array[J]. Semiconductor Optoelectronics, 2016, 37(1): 27.
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