采用无掩模反应离子刻蚀法制备了黑硅。利用扫描电子显微镜及紫外-可见-近红外分光光度计研究了黑硅的微结构和光学特性。结果表明, 黑硅微结构高度为2.0~3.5μm, 径向尺寸90~400nm, 间距200~610nm。在400~1000nm光谱范围内黑硅吸收率为94%, 是单晶硅的1.5倍; 在1200~1700nm光谱范围吸收率为55%～60%, 是B掺杂单晶硅的20倍。制备的黑硅的光学带隙为0.6006eV, 吸收光谱明显向红外方向偏移。

The black silicon was prepared by non-mask reactive ion etching. Then the microstructure and optical properties were studied by means of scan-electron microscopy and UV-VIS-NIR spectrophotometer. The results show that, the height of microstructure is 2.0~3.5μm and the diameter is 90~400nm with a distance of 200~610nm. The absorptance of the black silicon produced by non-mask reactive ion etching remains 94% in the wavelength range of 400~1000nm, which is almost 150% of that of polished monocrystalline silicon. And the absorptance is 55%～60% in the wavelength range of 1200~1700nm, which is 20 times of that of B-doped monocrystalline silicon. The optical bandgap of black silicon is 0.6006eV, indicating a remarkable red-shift of absorption spectrum.