半导体光电, 2016, 37 (1): 55, 网络出版: 2016-03-22
GaSb晶片表面残留杂质分析
Residual Impurities Analysis on the Surface of Gallium Atimonide Wafers
摘要
对不同条件下制备的锑化镓抛光晶片表面进行了TOF-SIMS测试比较。结果表明使用体积比为5∶1的HCl与CH3COOH的混合溶液清洗腐蚀(100)GaSb晶片表面, 可以有效地去除金属离子、含S离子和大部分有机物, 而使用 (NH4)2S/(NH4)2SO4混合溶液方法钝化表面,可以使表面大部分Ga和Sb元素硫化, 降低了表面态密度。分析比较了清洗和钝化工艺对晶片表面化学成分的影响。
Abstract
Surface residual impurities and compouds of gallium atimonide (GaSb) wafers prepared by different methods have been investigated by TOF-SIMS. The results indicate that the surface treatment of GaSb(100) based on HCl and CH3COOH solutions (volume ratio is 5∶1) can effectively remove metals, sulfur anions and organics. Surface passivation based on (NH4)2S/(NH4)2SO4 solutions can sulfuride most element gallium and atimonide on the surface and decreases surface state density. Effects on surface composition of wafers in both treatments were analyzed by comparisons.
程雨, 刘京明, 苏杰, 刘彤, 杨凤云, 董志远, 赵有文. GaSb晶片表面残留杂质分析[J]. 半导体光电, 2016, 37(1): 55. CHENG Yu, LIU Jingming, SU Jie, LIU Tong, YANG Fengyun, DONG Zhiyuan, ZHAO Youwen. Residual Impurities Analysis on the Surface of Gallium Atimonide Wafers[J]. Semiconductor Optoelectronics, 2016, 37(1): 55.
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