半导体光电, 2016, 37 (1): 77, 网络出版: 2016-03-22
PbS/Cu2O异质结的制备和性能表征
Preparation and Characterization of PbS/Cu2O Heterojunction
摘要
采用电化学沉积法在酸性电解液中制备n型Cu2O薄膜, 并对其进行Cl掺杂, 制备Cu2O-Cl结构。然后利用连续离子吸附法在样品薄膜上复合PbS量子点。通过SEM和UV-vis对样品进行表征, 并对样品的光电化学性能进行了测试。结果表明, 未掺杂的Cu2O对PbS量子点的吸附能力较强一些, 经PbS敏化后的样品在太阳光谱的吸收拓展到了近红外区, PbS/Cu2O和PbS/Cu2O-Cl复合结构的光电化学性能均有所增加, 尤其是短路电流密度。PbS复合后的样品转换效率最高仅为0.67%, 主要原因是两者能级的不匹配, 形成异质结时引入界面态, 得不到理想的转换效率。
Abstract
n-Cu2O films were prepared by using KCl as the precursor, and Cl-doped Cl structure were obtained by making electrodeposition in acid electrolyte. Then PbS/Cu2O composite structure was fabricated with SILAR method. The samples were characterized by scanning electron microscopy (SEM) and UV-vis absorption spectrum. In addition, the conversion efficiency of composite electrode materials was characterized under visible light with the measured density of 100mV·cm-2. The results demonstrat that the optical absorption is widened to near infrared region and the photo-current is greatly improved after the modification of PbS. The top photoelectric conversion efficiency is only 0.67%, which due to the interface state between the mismatched band gap of PbS and Cu2O.
谢思思, 杨峰, 席金芳, 邹龙生, 蔡芳共, 程翠华, 赵勇, 阚香, 张勇. PbS/Cu2O异质结的制备和性能表征[J]. 半导体光电, 2016, 37(1): 77. XIE Sisi, YANG Feng, XI Jinfang, ZOU Longsheng, CAI Fanggong, CHENG Cuihua, ZHAO Yong, KAN Xiang, ZHANG Yong. Preparation and Characterization of PbS/Cu2O Heterojunction[J]. Semiconductor Optoelectronics, 2016, 37(1): 77.