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玻璃衬底二氧化钒薄膜的宽频带太赫兹波调制特性

Broadband THz modulation characteristics of vanadium dioxide thin film prepared on glass substrate

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摘要

针对二氧化钒(VO2)薄膜在可调谐太赫兹功能器件中的应用,采用磁控溅射法在K9玻璃衬底上制备了VO2薄膜,并用X射线衍射(XRD)对薄膜的晶相进行表征。利用配备加热装置的太赫兹时域光谱系统(THz-TDS)研究了薄膜样品在变温过程中的THz反射、透射光谱特性及其变化规律。实验结果表明,随着加热温度的升高,VO2薄膜发生半导体-金属相变并对宽频段THz波产生显著的调制作用。调制深度明显依赖于THz频率,薄膜样品对THz波反射功率、透射率的幅度调制深度在0.3~0.5 THz范围波动较大; 对THz波的透射率在低频处较大,高频处较小,调制深度在35%~65%之间变化。该薄膜制备简单,质量高,可应用于太赫兹开关和调制器等功能器件。

Abstract

For the applications of vanadium dioxide (VO2) thin film in terahertz tunable functional devices, the vanadium dioxide VO2 thin film was prepared by magnetron sputtering technique on K9 glass substrate, and the crystal structure was characterized by X-ray diffraction (XRD). Spectral characteristics and their variations of terahertz (THz) reflection and transmission signal passing through the sample at different temperatures were studied by the THz time domain spectroscopy system (THz-TDS) equipped with heating device. The experimental results indicated that the semiconductor-metal transition of VO2 thin film occurred with the increase of the heating temperature and showed excellent modulation to the broadband THz wave. The modulation depth was dependent on the THz frequency. The THz wave amplitude modulation depth of reflection power and transmission showed remarkable fluctuation in the band of 0.3-0.5 THz. The transmittance of THz wave was larger in the low frequency band than that in the high frequency band, and the modulation depth varied in the range of 35%-65%. The thin film was prepared simply and had high quality, which can be applied to THz modulator functions such as devices and switches.

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中图分类号:TB43

DOI:10.11884/hplpb201628.023104

所属栏目:太赫兹技术

基金项目:光电探测与传感集成技术教育部重点实验室开放基金项目(KFJJ201302)

收稿日期:2015-07-18

修改稿日期:2015-11-10

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陈 晨:四川大学 电子信息学院,成都 610064中国工程物理研究院 激光聚变研究中心, 成都 610041
罗振飞:中国工程物理研究院 激光聚变研究中心, 成都 610041
蒋亚东:电子科技大学 光电信息学院 电子薄膜与集成器件国家重点实验室, 成都 610054
吴志明:电子科技大学 光电信息学院 电子薄膜与集成器件国家重点实验室, 成都 610054
孟庆龙:四川大学 电子信息学院,成都 610064
杨存榜:中国工程物理研究院 激光聚变研究中心, 成都 610041
周 逊:中国工程物理研究院 激光聚变研究中心, 成都 610041
张 彬:四川大学 电子信息学院,成都 610064

联系人作者:陈 晨(johnny6789@163.com)

备注:陈 晨(1989-),男,硕士,从事电光晶体和太赫兹技术等研究

【1】Kleine-Ostmann T, Nagatsuma T. A review on terahertz communications research[J]. Journal of Infrared Millimeter and Terahertz Waves, 2011, 32(2): 143-171.

【2】Kersting R, Strasser G, Unterrainer K. Terahertz phase modulator[J]. Electronics Letters, 2000, 36(13): 1156-1158.

【3】Kleine-Ostmann T, Dawson P, Pierz K, et al. Room-temperature operation of an electrically driven terahertz modulator[J]. Applied Physics Letters, 2004, 84(18): 3555-3557.

【4】Chen H T, Padilla W J, Zide J M O, et al. Active terahertz metamaterial devices[J]. Nature, 2006, 444(6): 783-790.

【5】Chen C Y, Pan C L, Hsieh C F, et al. Liquid-crystal-based terahertz tunable Lyot filter[J]. Applied Physics Letters, 2006, 88:101107.

【6】Morin F J. Oxides which show a metal-to-insulator transition at the Neel temperature[J]. Physical Review Letters, 1959, 3(1): 34-36.

【7】李宏哲, 盛传祥, 厉申博, 等. 纳秒激光作用下二氧化钒薄膜相变特性[J]. 强激光与粒子束, 2015, 27:059001.(Li Hongzhe, Sheng Chuanxiang, Li Shenbo, et al. Phase transition properties of vanadium oxide thin films irradiated by nanosecond laser. High Power Laser and Particle Beams, 2015, 27:059001)

【8】Cavalleri A, Chong H H W, Fourmaux S, et al. Picosecond soft X-ray absorption measurement of the photo induced insulator-to-metal transition in VO2[J]. Physical Review B, 2004, 69: 153106.

【9】Nag J, Haglund Jr R F. Synthesis of vanadium dioxide thin films and nanoparticles[J]. Journal of Physics Condensed Matter, 2008, 20: 264016.

【10】Eden D D. Vanadium dioxide storage material[J]. Optical Engineering, 1981, 20(3): 377-378.

【11】Blodgett D W, Lange C H, McNally P J. Vanadium-dioxide-based infrared spatial light modulators[C]//Optical Engineering and Photonics in Aerospace Sensing. International Society for Optics and Photonics, 1993.

【12】Wang H, Yi X, Li Y. Fabrication of VO2 films with low transition temperature for optical switching applications[J]. Optics Communications, 2005, 256(4/6): 305-309.

【13】Lampert C M. Electrochromic materials and devices for energy efficient windows[J]. Solar Energy Materials, 1984, 11(84): 1-27.

【14】Hendaoui A, mond N, Dorval S, et al. Enhancement of the positive emittance-switching performance of thermochromic VO2 films deposited on Al substrate for an efficient passive thermal control of spacecrafts[J]. Current Applied Physics, 2013, 13(5): 875-879.

【15】Rahm M, Li J S, Padilla W J. THz wave modulators: a brief review on different modulation techniques[J]. Journal of Infrared Millimeter and Terahertz Waves, 2013, 34(1): 1-27.

【16】Gurvitch M, Luryi S, Polyakov A, et al. VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process[J]. Journal of Applied Physics, 2007, 102: 033504.

【17】Case F C. Modifications in the phase transition properties of predeposited VO2 films[J]. Journal of Vacuum Science Technology, 1984, 2(4): 1509-1512.

【18】Jepsen P U, Fischer B M, Thoman A, et al. Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy[J]. Phys Rev B, 2006, 74(20): 3840-3845.

【19】Naftaly M, Miles R E. Terahertz time-domain spectroscopy of silicate glasses and the relationship to material properties[J]. Journal of Applied Physics, 2007, 102: 043517.

【20】Shin S, Suga S, Taniguchi M, et al. Vacuum-ultraviolet reflectance and photo-emission study of the metal-insulator phase transitions in VO2, V6O13, and V2O3[J]. Physical Review B: Condensed Matter, 1990, 41(8): 4993-5009.

【21】Jepsen P U, Fischer B M, Thoman A, et al. Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy[J]. Phys Rev B, 2006, 74(20): 3840-3845.

引用该论文

Chen Chen,Luo Zhenfei,Jiang Yadong,Wu Zhiming,Meng Qinglong,Yang Cunbang,Zhou Xun,Zhang Bin. Broadband THz modulation characteristics of vanadium dioxide thin film prepared on glass substrate[J]. High Power Laser and Particle Beams, 2016, 28(2): 023104

陈 晨,罗振飞,蒋亚东,吴志明,孟庆龙,杨存榜,周 逊,张 彬. 玻璃衬底二氧化钒薄膜的宽频带太赫兹波调制特性[J]. 强激光与粒子束, 2016, 28(2): 023104

被引情况

【1】刘志伟,路远,冯云松,胡杰,刘瑞煌. 基于泵浦探针法研究VO2薄膜多波段红外激光相变特性. 光子学报, 2018, 47(12): 1231002--1

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