对P型基底均匀掺杂的情况下电子轰击有源像素传感器(EBAPS)的电荷收集效率进行了理论模拟研究，依据低能电子与固体的相互作用模型结合Monte-Carlo计算方法模拟了光电子入射到死层和倍增层中的运动轨迹，并分析了经过死层后的能量损失率所受影响因素；依据半导体理论研究了P型基底掺杂浓度、膜厚、入射电子能量对电荷收集效率的影响因素。最终获得的电荷收集效率理论模拟结果与已报道的(4 keV，均匀掺杂的EPAPS)实测的结果较为相符，表明此文的模拟结果可以为高增益的EBAPS的制作提供理论指导。

The charge collection efficiency of electron bombarded active pixel sensor(EBAPS) was simulated while the EBAPS with uniformly doped P type substrate. The photoelectron scatting trajectories in dead layer and electron multiplier layer were simulated based on the low-energy electron-solid interaction model and Monte Carlo method. Meanwhile the influence factors how affecting the energy loss rate were studied. According to semiconductor theory, the influence factors(B atoms doping concentration, film thickness and the incident electron energy) how affecting the charge collection efficiency were studied. The final charge collection efficiency′s simulation results are consistent with the reported(4 keV, uniformly doping) measured results, which means the simulation result can provide theoretical guidance for the fabrication of high gain EBAPS.