计算机数控精密机械抛光技术是制造高精度、高质量光学元件表面的主要技术之一。然而，对于碳化硅材料表面去除特性方面的研究却相对较少。在航天航空领域中，陶瓷类材料碳化硅的应用较为广泛。针对计算机数控精密机械抛光技术，根据一系列的抛光实验，研究并总结出碳化硅材料表面的去除机理。基于选择不同等级的四种变量参数：抛光磨头转速、抛光压力、磨头补偿量和抛光头角度，分析碳化硅材料表面的去除趋势。采用Taguchi方法可以有效优化实验设计参数、减少实验整体次数。结果表明：文中总结出对应的抛光参数组合和材料表面的去除特性，确保加工出高质量表面的碳化硅材料。

Precision mechanical polishing was one of the primary techniques for the fabrication of optical components with both high-precision and high-quality surfaces. However, few studies have been reported on the removal rate characteristics of silicon carbides(SiC) in high finish quality polishing processes. SiC was an important ceramic material for many critical industrial and aerospace applications. A theoretical investigation and a series of polishing experiments in computer controlled precision polishing process were presented. And a better understanding of removal mechanisms of SiC surfaces was also proposed for optimizing surface quality. Head speed, tool pressure, tool offset and polishing angle were selected to analyze the surface removal tendency. The Taguchi method was used as an efficient method to optimize the polishing conditions and reduce excessive experimental requiring. Moreover, the results imply the polishing parameters combinations required to achieve the desired surface finish and better application of removal characteristic.