在半导体器件高功率电磁脉冲效应数值模拟中，真实器件的物理模型构建较为困难。为了解决这一问题，以某型单向瞬态电压抑制(TVS)二极管为例，对其进行测试获取建模所需的参数信息。通过X光成像、扫描电子显微镜(SEM)及杂质染色等技术手段，获得了该器件PN结正对面积大小、PN结深度等结构参数。通过实验测量了二极管的反向击穿电压和电容曲线，结合数值计算，推导出了二极管的杂质浓度。利用本次实验获得的参数，结合数值计算的结果，建立了该型号二极管的真实半导体物理模型。对该模型进行了数值仿真，计算了器件的伏安响应曲线并与实验值进行了比对，计算结果与实验值吻合较好。本次的方法除了可以直接用于PN结型器件的建模外，也为其他器件物理模型的建立提供了参考，可在半导体器件效应数值模拟研究中得到应用。

Building a physical semiconductor model is a technical difficulty in numerical simulation of EMP effect on semiconductor device. As an example, one type TVS diode is tested to obtain parameters for model building. Area and depth of PN junction are obtained by X-ray imaging, SEM scanning and doping impurity staining. Breakdown voltage and capacitance curve of the diode are surveyed and be used for educing doping concentration of the diode combining with numerical results. The semiconductor model of this type diode is built by using parameters from this test, and is used for numerical simulation. Numerical result tallies with the test. This test method can be used in PN junction modeling, and can be referenced for modeling of other device. It could be applied in HPM effect numerical study.