采用中频磁控溅射技术制备了PbSeIn和PbSeTe两种掺杂PbSe薄膜， 并采用理论模拟与实际实验相结合的方法研究了In和Te两种元素的掺杂机制及其对薄膜性 能的影响。结果表明，In原子主要通过置换Pb原子的形式进行掺杂，而Te原子则主要置换 Se原子；与未掺杂PbSe薄膜相比，PbSeIn和PbSeTe两种薄膜的光电敏感性均有一定提高， 其中In掺杂PbSe薄膜的平均电阻变化率最高。这是由于In元素在PbSe薄膜禁带内形成深杂 质能级，提高非平衡载流子寿命所导致的。而PbSeTe薄膜的光电敏感性则与未掺杂PbSe薄 膜相近。

Two doped PbSe thin films PbSeIn and PbSeTe are fabricated by mid-frequency magnetron sputtering. The doping mechanisms of two elements In and Te and their influences on film properties are studied by combining theoretical simulation with practical experiments. The results show that the doping of In atoms is achieved mainly by substituting Pb atoms and that of Te is achieved mainly by substituting Se atoms. Compared with the undoped PbSe films, the photoelectric properties of both PbSeIn and PbSeTe films are improved certainly. The In doped PbSe film has the highest average resistance change rate. The photoelectric sensitivity of the PbSeTe film is close to that of the undoped PbSe film.