采用快开通功率MOSFET，通过优化驱动电路、磁芯参数以及耦合结构，设计了基于半导体开关和直线变压器驱动源(LTD)技术的高重频快沿高压脉冲源。该脉冲源由四级LTD串联而成，可实现单次脉冲和最高频率2 MHz脉冲串输出。脉冲最高幅值约2.3 kV，上升沿约7 ns，脉宽约90 ns，下降沿约20 ns，输出电压效率约95%。该脉冲源结构紧凑，输出脉冲稳定，实现了模块化设计，可作为重频电磁脉冲模拟源使用。

Based on fast switching power MOSFET, by using a high repetitive frequency integrated drive chip and a high efficiency magnetic coupling structure, the compact high power repetitive frequency generator is designed. This generator is constructed by four stages LTD and tested for a single shot and repetitive operation at 2 MHz. Near-rectangle waveforms are obtained on the resistance of 200 Ω, with an output voltage of 2.27 kV, a rise time of 6.8 ns, a pulse width of 91 ns, and a fall time of 20 ns. The overall system voltage efficiency is up to 95%. The generator can be used for research of repetitive frequency pulse effect because of its compactness, stableness and modularity.