Chinese Optics Letters, 2016, 14 (4): 042302, Published Online: Aug. 6, 2018
Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells Download: 984次
230.5590 Quantum-well, -wire and -dot devices 230.3670 Light-emitting diodes 160.4760 Optical properties
Abstract
Temperature-dependent photoluminescence (PL) of phase-separated InGaN quantum wells is investigated over a broader excitation power range. With increasing excitation power from 0.5 μW to 50 mW, the In-rich quasi-quantum dot (QD)-related PL peak disappears at about 3 mW, while temperature behavior of the InGaN matrix-related PL peak energy (linewidth) gradually evolves from a strong “S-shaped” (“W-shaped”) temperature dependence into a weak “S-shaped” (an approximately “V-shaped”), until becoming an inverted “V-shaped” (a monotonically increasing) temperature dependence. This indicates that, with increasing excitation power, the carrier localization effect is gradually reduced and the QD-related transition is submerged by the significantly enhanced InGaN matrix-related transition, while the carrier thermalization effect gradually increases to become predominant at high excitation powers.
Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(4): 042302.