分析了光伏 InSb探测器响应时间与量子效率、反向饱和电流的关系,设计出量子效率为0.61～0.56、响应时间为 20～60 ps的锑化铟(InSb)红外探测器,实验制备了台面 p＋-on-n结构的探测器。通过 I-V、C-V测试验证了制备的器件物理参数与设计值吻合。采用脉冲响应测试了 InSb探测器的响应时间(0.3.s),由于封装和其他分布电容的限制,响应时间测试值与理论计算值存在差距。

The relationships of response time, quantum efficiency and dark current of InSb photovoltaic detector are calculated theoretically. The preconditions were set up, in which the InSb infrared detector response time varies from 20 ps to 60 ps when quantum efficiency changes from 0.56 to 0.61. The mesa p＋-n structure is set for the detector as another condition. Through I-V, C-V curve test, the parameters of devices agree with designed values. The response time is 0.3.s with pulse response testing. There is inconsistency between theoretical values and experimental results,for limitations of bond pad capacitance and distributed capacitance.