红外与毫米波学报, 2016, 35 (2): 133, 网络出版: 2016-05-11
离子束溅射法制备碳化锗薄膜的红外光学特性和力学特性
The infrared optical and mechanical properties of germanium carbide films prepared by ion beam sputtering
离子束溅射沉积 碳化锗 红外光学特性 机械特性 ion beam sputtering deposition germanium carbon infrared optical property mechanical property
摘要
采用离子束溅射法通过在CH4和Ar 的混合气体中溅射Ge靶材制备碳化锗(Ge1-xCx)薄膜.分别通过原子力显微镜、拉曼光谱和X射线光电子能谱、傅里叶变换红外光谱以及纳米压痕测试研究了薄膜的表面形貌、化学结构、光学特性和力学特性.同时分析了制备薄膜时的离子源束压和薄膜性质之间的关系.结果表明,薄膜的粗糙度随束压的增大而减小.在较高束压下制备的薄膜含有较少的C元素和较多的Ge-C键.薄膜具有非常好的红外光学特性和力学特性.薄膜在较大波长范围内具有良好的透光性能.C元素含量随着束压的升高而降低,进而导致薄膜的折射率在束压从300 V增大到800 V的过程中逐渐升高.薄膜的硬度大于8 GPa.由于薄膜中的Ge-C键代替了C-C 键和C-Hn键,薄膜的硬度随束压的增加逐渐增加.
Abstract
Germanium carbon (Ge1-xCx) thin films were deposited by ion beam sputtering deposition of Ge target in a CH4/Ar discharge. The surface morphology, chemical structure, infrared optical and mechanical properties of the Ge1-xCx films were investigated by atomic force microscopy (AFM), Raman spectroscopy, X-ray photoelectron spectroscopy(XPS), Fourier transform infrared (FTIR) spectroscopy and nano-indentation, respectively. The relationship between ion beam voltage and film properties was discussed. The results show that the surface roughness decreases with increasing of the ion beam voltage. The film deposited at a higher voltage has lower carbon content and higher fraction of Ge-C bonds. The film has excellent infrared optical and mechanical properties. The films show good transparent over a wide range. Due to the content of the carbon decreasing with increasing of voltage, the refractive index increases obviously as the ion beam voltage increases from 300 V to 800 V. The hardness of the film is above 8 GPa. With the Ge-C bonds instead of the C-C bonds and C-Hn bonds, the hardness of the film increases with increasing ion beam voltage.
孙鹏, 胡明, 张锋, 季一勤, 刘华松, 刘丹丹, 冷健, 杨明, 李钰. 离子束溅射法制备碳化锗薄膜的红外光学特性和力学特性[J]. 红外与毫米波学报, 2016, 35(2): 133. SUN Peng, HU Ming, ZHANG Feng, JI Yi-Qin, LIU Hua-Song, LIU Dan-Dan, LENG Jian, YANG Ming, LI Yu. The infrared optical and mechanical properties of germanium carbide films prepared by ion beam sputtering[J]. Journal of Infrared and Millimeter Waves, 2016, 35(2): 133.