结合分析法和优化法,针对片上叠层式变压器提出了一种参数提取方法.分析法得出的参数值作为优化法的初始值,从而得出最终的模型参数值.结果表明,在100 MHz~60 GHz频率范围内,硅衬底的叠层式变压器S参数的仿真结果和测试结果吻合很好.

A parameter-extraction approach for the stacked on-chip transformer, which combines the analytical approach and the empirical optimization procedure, was developed. The model parameters determined from the analytical expressions were considered as an initial guess of a subsequent optimization procedure leading to the final model parameters. Good agreement was obtained between simulated and measured results for a stacked transformer on silicon substrate in the frequency range 100 MHz~60 GHz.