红外与毫米波学报, 2016, 35 (2): 214, 网络出版: 2016-05-11  

利用同步辐射光电子能谱技术研究Pb1-xSrxTe薄膜的能带移动及其组成异质结能带带阶

Band shift of Pb1-xSrxTe thin film and its band alignment using synchrotron radiation photoelectron spectroscope
作者单位
1 浙江大学城市学院 信息与电气工程学院, 浙江 杭州 310015
2 浙江大学 物理系, 浙江 杭州 310027
3 中国科技大学 国家同步辐射实验室, 安徽 合肥 230029
摘要
利用同步辐射光电子能谱技术研究了低Sr组分时Pb1-xSrxTe薄膜能带的移动规律,并计算了Pb1-xSrxTe/PbTe异质结中导带帯阶所占比率.当不考虑应力时,该异质结界面导带带阶比率Qc=ΔEC/ΔEg=0.71.当考虑应力时,PbTe能带发生L能谷与O能谷的劈裂,其导带带阶比率分别为QLC=0.47和QOC=0.72.Pb1-xSrxTe/PbTe异质结界面具有类型Ⅰ的能带排列结构,这说明Pb1-xSrxTe/PbTe型量子阱或量子点对电子与空穴都有较强的限制能力.该异质结能带帯阶的精确测量有利于该类三元系半导体异质结在中红外光电器件的研发和应用中发挥重要作用.
Abstract
The valence band shift in Pb1-xSrxTe thin films with different Sr compositions was studied. The ratio of conduction band offset and valence band offset in this heterostructure has been determined. Without considering the strain effect, the conduction band offset ratio is Qc=ΔEc/ΔEg=0.71, and with considering the strain effect, the energy band of PbTe is degenerated into longitudinal and oblique valleys. The conduction band offset ratio for longitudinal valley is QLC=0.47 and for oblique valley is QOC=0.72, respectively. Pb1-xSrxTe/PbTe heterostructure has a type Ⅰ alignment at the interface, which implies the confinement of both electrons and holes. The accurate determination of band alignment of Pb1-xSrxTe/PbTe heterostructure has great benefits in the research and development of mid-infrared opto-electronic devices.

蔡春锋, 彭曼丽, 翟继志, 毕岗, 张兵坡, 王淼, 吴惠桢, 张文华, 朱俊发. 利用同步辐射光电子能谱技术研究Pb1-xSrxTe薄膜的能带移动及其组成异质结能带带阶[J]. 红外与毫米波学报, 2016, 35(2): 214. CAI Chun-Feng, PENG Man-Li, ZHAI Ji-Zhi, BI Gang, ZHANG Bing-Po, WANG Miao, WU Hui-Zhen, ZHANG Wen-Hua, ZHU Jun-Fa. Band shift of Pb1-xSrxTe thin film and its band alignment using synchrotron radiation photoelectron spectroscope[J]. Journal of Infrared and Millimeter Waves, 2016, 35(2): 214.

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