红外与激光工程, 2016, 45 (4): 0421001, 网络出版: 2016-05-11
PEALD沉积温度对AlN的结构和表面特性的影响
Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition
氮化铝 等离子增强原子层沉积 生长速率 结晶化 表面粗糙度 沉积温度 Aluminum nitride plasma enhanced atomic layer deposition growth rate crystallization surface roughness deposition temperature
摘要
研究通过等离子增强原子层沉积(PEALD)在不同沉积温度下生长的AlN温度对其特性的影响。前驱体是NH3和TMA, 在300 ℃、350 ℃和370 ℃沉积温度下分别沉积了200、500、800、1 000、1 500周期的AlN层, 并讨论了AlN薄膜的生长速率、结晶化和表面粗糙度。结果表明, 在300~370 ℃范围内, 随着温度的上升薄膜的沉积速率和结晶化增加, 而薄膜表面粗糙度减小。
Abstract
The influence of growth temperature on the properties of aluminum nitride(AlN) films are grown by plasma enhanced atomic layer deposition(PEALD) at different deposition temperature. NH3 and trimethylaluminum(TMA) were used as precursors, 200, 500, 800, 1 000, 1 500 cycles AlN layers were deposited at 300 ℃, 350 ℃ and 370 ℃, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370 ℃.
陈芳, 方铉, 王双鹏, 牛守柱, 方芳, 房丹, 唐吉龙, 王晓华, 刘国军, 魏志鹏. PEALD沉积温度对AlN的结构和表面特性的影响[J]. 红外与激光工程, 2016, 45(4): 0421001. Chen Fang, Fang Xuan, Wang Shuangpeng, Niu Shouzhu, Fang Fang, Fang Dan, Tang Jilong, Wang Xiaohua, Liu Guojun, Wei Zhipeng. Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition[J]. Infrared and Laser Engineering, 2016, 45(4): 0421001.
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