利用磁控溅射方法改变氧气含量制备了一系列NiO∶Cu/ZnO异质pn结。 实验结果表明，氧含量对NiO∶Cu/ZnO异质pn结电学影响很大。 相对于纯氩溅射，引入一定氧气(O2/(Ar+O2)比例为30%)后，NiO∶Cu/ZnO异质pn结的整流特性明显得到改善。与此同时，NiO∶Cu/ZnO异质pn结的光透过率也从40%增大到80%。这可能是由于氧气的轻量引入致使NiO∶Cu/ZnO异质pn结的结晶得到改善，薄膜内缺陷减少所致。进一步提高氧气含量，直到O2/(Ar+O2)比例至80%后，异质结的整流特性有所削弱，这可能是由于过多氧气的引入造成薄膜缺陷再次增多，进而影响到异质结的整流特性。这一结论得到了EDS、XRD、AFM和UV结果的支持。

NiO∶Cu/ZnO pn heterojunctions with different oxygen concentration were fabricated by magnetron sputtering technology. The rectifying characteristics of NiO∶Cu/ZnO pn heterojunctions have been improved with the O2/(Ar+O2) ratio from 0% to 30%, where the average optical transmittance increases from 40% to 80% in the visible range, which may be explained by the improved crystallization due to the reduced defects. When the oxygen partial pressure increases to 80%, the rectifying property is depressed again because of introducing more oxygen into the sample and the appearance of more defects. These results are also evidenced by EDS, XRD, AFM and UV results.