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基于CVD方法生长在硅基底上立方碳化硅的拉曼散射研究

Raman Scattering Studies on CVD Grown Cubic SiC Thin Films on Si

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摘要

立方碳化硅(3C-SiC)薄膜通过化学气相沉积(CVD)制备在Si(100)衬底上。本论文主要通过椭偏光谱仪(SE)和拉曼散射仪对3C-SiC薄膜的微观结构和光学性能进行进一步的研究。根据SE的分析获得3C-SiC薄膜厚度;根据拉曼散射的分析:可从TO模式和LO模式的线形形状的拟合得到样品的相关长度和载流子浓度。结果表明:该碳化硅(3C-SiC)薄膜质量随膜厚度增加而得到提高,同时分析了外延层厚度对薄膜特性的影响。

Abstract

Cubic(3C)-SiC films were grown on Si(100)substrate by chemical vapor deposition(CVD).The microstructures and optical properties of 3C-SiC films have been studied by spectroscopic ellipsometry(SE)and Raman scattering.Raman scattering and SE were used to characterize 3C-SiC materials.From the analysis of SE we can obtain thickness of 3C-SiC films.Also from the analysis of Raman spectra,we can see the line shape of TO mode and LO mode from the fitting result,and the correlation length and carrier concentration were obtained.The result of correlation length reveals that the crystalline quality is expected to improve with film thickness increasing and Raman scattering spectra also shows the effects of the epilayer thicknesses.

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中图分类号:O433.3,O484.5

DOI:10.13883/j.issn1004-5929.201602006

所属栏目:材料研究中的应用

基金项目:中山大学光电材料与技术国家重点实验室开放课题和国家自然科学基金(11474365,61377055,61176085);广西相对论天体物理重点实验室广西自然科学基金创新团队项目(2013GXNSFFA019001)和国家自然科学基金“基于铁电体微畴结构的平板集成高速电光器件研究”(AE0520088)

收稿日期:2015-06-10

修改稿日期:2015-09-12

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作者单位    点击查看

陈帅:物理科学与工程技术学院,广西相对论天体物理重点实验室,光电子材料与探测技术实验室,广西大学,南宁 530004
谢灯:华南师范大学光电子材料与技术研究所,广州 510631
丘志仁:中山大学光电材料与技术国家重点实验室,物理科学与工程技术学院,广州 510275
Tin Chin-Che:Department of Mechanical Engineering,University of Malaya,50603 Kuala Lumpur,MalaysiaDepartment of Physics,Auburn University,Auburn,Alabama 36849,U.S.A.
王洪朝:华南师范大学光电子材料与技术研究所,广州 510631
梅霆:华南师范大学光电子材料与技术研究所,广州 510631
万玲玉:物理科学与工程技术学院,广西相对论天体物理重点实验室,光电子材料与探测技术实验室,广西大学,南宁 530004
冯哲川:物理科学与工程技术学院,广西相对论天体物理重点实验室,光电子材料与探测技术实验室,广西大学,南宁 530004

联系人作者:陈帅(chenshuai7377@163.com)

备注:陈帅(1989-),女,硕士,从事光电材料工作。

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引用该论文

CHEN Shuai,XIE Deng,QIU Zhi-ren,TIN Chin-che,WANG Hong-chao,MEI Ting,WAN Ling-yu,FENG Zhe-chuan. Raman Scattering Studies on CVD Grown Cubic SiC Thin Films on Si[J]. The Journal of Light Scattering, 2016, 28(2): 125-130

陈帅,谢灯,丘志仁,Tin Chin-Che,王洪朝,梅霆,万玲玉,冯哲川. 基于CVD方法生长在硅基底上立方碳化硅的拉曼散射研究[J]. 光散射学报, 2016, 28(2): 125-130

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